2SC2565 Specs and Replacement
Type Designator: 2SC2565
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Package: MT-200
2SC2565 Substitution
- BJT ⓘ Cross-Reference Search
2SC2565 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
isc Silicon NPN Power Transistor 2SC2565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1095 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2SC256, 2SC2560, 2SC2561, 2SC2562, 2SC2562O, 2SC2562R, 2SC2563, 2SC2564, 2SC2240, 2SC2566, 2SC2567, 2SC2567A, 2SC2568, 2SC2569, 2SC257, 2SC2570, 2SC2570A
Keywords - 2SC2565 pdf specs
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History: SBC817-25LT3G | 2SC2689 | BCW30R
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