2SC2624 Datasheet. Equivalente

 ..1. Size:213K  inchange semiconductor
 2sc2624.pdf

isc Silicon NPN Power Transistor 2SC2624 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

 8.1. Size:101K  fuji
 2sc2626.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 8.2. Size:24K  hitachi
 2sc2620.pdf

2SC2620 Silicon NPN Epitaxial Planar Application VHF amplifier, Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2620 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW J

 8.3. Size:129K  mospec
 2sc2625.pdf

A A A

 8.4. Size:238K  nell
 2sc2625b.pdf

RoHS 2SC2625B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 10A/400V/80W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High collector to base voltage VCBO 5.45 0.1 5.45 0.1 1.4 Satisfactory linearity of foward cur

 8.5. Size:337K  kexin
 2sc2620.pdf

SMD Type Transistors NPN Transistors 2SC2620 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.6. Size:231K  foshan
 2sc2621 3da2621.pdf

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25 ) 1.2 W C P (Tc=25 ) 10 W C T 150

 8.7. Size:1281K  cn sps
 2sc2625t4tl.pdf

2SC2625T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V

 8.8. Size:174K  cn sptech
 2sc2625.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.9. Size:216K  inchange semiconductor
 2sc2625.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25

 8.10. Size:213K  inchange semiconductor
 2sc2626.pdf

isc Silicon NPN Power Transistor 2SC2626 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI