2SC263 Todos los transistores

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2

Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Paramete

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2

Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy

Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy