2SC2632 Todos los transistores

 ..1. Size:34K  panasonic
 2sc2632.pdf

Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy

 ..2. Size:38K  panasonic
 2sc2632 e.pdf

Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy

 8.1. Size:127K  toshiba
 2sc2639.pdf

 8.2. Size:128K  toshiba
 2sc2638.pdf

 8.3. Size:126K  panasonic
 2sc2636.pdf

 8.4. Size:38K  panasonic
 2sc2631 e.pdf

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2

 8.5. Size:59K  panasonic
 2sc2636 e.pdf

Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Paramete

 8.6. Size:42K  panasonic
 2sc2634 e.pdf

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to

 8.7. Size:38K  panasonic
 2sc2634.pdf

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to

 8.8. Size:34K  panasonic
 2sc2631.pdf

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2