2SC2633
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2633
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 65
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SC2633
2SC2633
Datasheet (PDF)
8.4. Size:38K panasonic
2sc2631 e.pdf 
Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2
8.5. Size:59K panasonic
2sc2636 e.pdf
Transistor2SC2636Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Paramete
8.6. Size:42K panasonic
2sc2634 e.pdf
Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to
8.7. Size:38K panasonic
2sc2634.pdf
Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to
8.8. Size:34K panasonic
2sc2631.pdf
Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2
8.9. Size:34K panasonic
2sc2632.pdf
Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy
8.10. Size:38K panasonic
2sc2632 e.pdf
Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy
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