2SC266 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit mm High power gain Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VC

2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.70 pF (typ.) Low noise figure NF = 2.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Colle

M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone (818) 701-4933 Fax (818) 701-4939 NPN Features Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Small Reverse Transfer Capacitance. Low Noise Figure. Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 15.1 15.5 Product-Rank 2SC2668-R 2SC2668-O 2SC2

2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Co

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION With TO-220 package Complement to type 2SA1133/1133A High VCEO Large PC APPLICATIONS Power amplifier applications TV vertical deflection applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra

isc Silicon NPN Power Transistor 2SC2665 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

isc Silicon NPN Power Transistor 2SC2660 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SA1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=