2SC2672 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2672
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 25 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3000 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO131
Búsqueda de reemplazo de transistor bipolar 2SC2672
2SC2672 Datasheet (PDF)
2sc2670.pdf
2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v
2sc2671 e.pdf
Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE
2sc2671.pdf
Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC846AQ | LBC859BLT1G | LDTB123EET1G | MMUN2113 | BCV27 | 2SA546A
History: BC846AQ | LBC859BLT1G | LDTB123EET1G | MMUN2113 | BCV27 | 2SA546A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050