2N1893-46 Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt

2N1893 SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to

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2N1893X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 0.6A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N 1893 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 80 V VCER Collector Emitter Voltage 100 V VCBO Collector Base Voltage 120 V