2N1893-46 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2N1893-46 Datasheet. Specs and Replacement

Type Designator: 2N1893-46 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO46

2N1893-46 Substitution

- BJT ⓘ Cross-Reference Search

2N1893-46 datasheet

8.1. Size:663K rca

2n1893.pdf pdf_icon

... See More ⇒

8.2. Size:51K philips

2n1893 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt... See More ⇒

8.3. Size:311K st

2n1893.pdf pdf_icon

2N1893 SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to ... See More ⇒

8.4. Size:64K central

2n1613 2n1711 2n1893.pdf pdf_icon