2N1893S Todos los transistores

 8.1. Size:663K  rca
 2n1893.pdf

 8.2. Size:51K  philips
 2n1893 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt

 8.3. Size:311K  st
 2n1893.pdf

2N1893 SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to

 8.4. Size:64K  central
 2n1613 2n1711 2n1893.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.5. Size:10K  semelab
 2n1893x.pdf

2N1893X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 0.6A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 8.6. Size:223K  cdil
 2n1893.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N 1893 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 80 V VCER Collector Emitter Voltage 100 V VCBO Collector Base Voltage 120 V

 8.7. Size:55K  microsemi
 2n1893 2n720a.pdf