2N1893S Datasheet. Specs and Replacement
Type Designator: 2N1893S 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N1893S Substitution
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2N1893S datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor 1997 Apr 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1893 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitt... See More ⇒
2N1893 SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to ... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N1890, 2N1890S, 2N1891, 2N1892, 2N1893, 2N1893-46, 2N1893A, 2N1893L, 8550, 2N1893UB, 2N1894, 2N1895, 2N1896, 2N1897, 2N1898, 2N1899, 2N19
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