2SC2715R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCE

2SC2715SOT-23 TRANSISTOR (NPN)FEATURES 1. BASE 2. EMITTER High Power Gain3. COLLECTOR Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC C

2SC2715 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO E

2SC2715 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. / Applications High frequency a

SMD Type TransistorsNPN Transistors2SC2715SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Colle