2SC2751 Todos los transistores

 

2SC2751 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2751

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO126

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2SC2751 Datasheet (PDF)

1.1. 2sc2751.pdf Size:124K _inchange_semiconductor

2SC2751
2SC2751

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 DESCRIPTION Ў¤ With TO-3N package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMB

4.1. 2sc2753.pdf Size:307K _toshiba

2SC2751
2SC2751

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm • Low noise figure, high gain • NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e • NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter v

4.2. 2sc2752.pdf Size:188K _nec

2SC2751
2SC2751

 4.3. 2sc2750.pdf Size:200K _no

2SC2751
2SC2751

4.4. 2sc2750.pdf Size:279K _inchange_semiconductor

2SC2751
2SC2751

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle

 4.5. 2sc2752.pdf Size:122K _inchange_semiconductor

2SC2751
2SC2751

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2752 DESCRIPTION Ў¤ With TO-126 package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Low power switching regulator Ў¤ DC-DC converter Ў¤ High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings

4.6. 2sc2757.pdf Size:70K _inchange_semiconductor

2SC2751
2SC2751

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base V

4.7. 2sc2757.pdf Size:338K _kexin

2SC2751

SMD Type Transistors NPN Transistors 2SC2757 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

Otros transistores... 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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