Справочник транзисторов. 2SC2751

 

Биполярный транзистор 2SC2751 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC2751
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 120 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO126

 Аналоги (замена) для 2SC2751

 

 

2SC2751 Datasheet (PDF)

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2sc2751.pdf

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isc Silicon NPN Power Transistor 2SC2751DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

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2sc2753.pdf

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2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm Low noise figure, high gain NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter v

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2sc2750.pdf

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2SC2751

SMD Type TransistorsNPN Transistors2SC2757SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

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2SC2757TRANSISTOR (NPN)FEATURES SOT-23 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 1BASE 2EMITTER 3COLLECTOR MARKING T33MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5

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2SC2751 2SC2751

isc Silicon NPN Power Transistor 2SC2752DESCRIPTIONHigh breakdown voltageComplementary to 2SA1156 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2752 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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2sc2750.pdf

2SC2751 2SC2751

isc Silicon NPN Power Transistor 2SC2750DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

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2sc2757.pdf

2SC2751 2SC2751

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2757DESCRIPTIONLow NoiseHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBO

Другие транзисторы... 2SC2743 , 2SC2744 , 2SC2745 , 2SC2746 , 2SC2748 , 2SC2749 , 2SC2749A , 2SC274H , S9014 , 2SC2751A , 2SC2751N , 2SC2751O , 2SC2751R , 2SC2751Y , 2SC2752 , 2SC2752N , 2SC2752O .

 

 
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