2SC2879 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 100W PEP Power Gain Gp = 13dB Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -24dB(Max.) (MIL Standard) MAXIMUM RATINGS

2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-b

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute

2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC2873 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1213 Maxim

MCC 2SC2873-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2873-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

MCC 2SC2873-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2873-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V Millimeter Millimeter VCEO Collector-Emitter Voltage 50 V REF. REF.

2SC2873 SOT- 89-3L TRANSISTOR (NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Col

SMD Type Transistors NPN Transistors 2SC2873 Features 1.70 0.1 Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage 0.42 0.1 Complementary to 2SA1213 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO

General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 BASE 2 0.061(1.55) 2 COLLECTOR REF. 3 EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.

General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. SOT-89-3L Circuit Diagram 0.181(4.60) Collector 0.173(4.40) 1 BASE 2 0.061(1.55) 2 COLLECTOR REF. 3 EMITTER 1 Base 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 3 Emitter 0.020(0.52) 0.023(0.

2SC2873 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO V Collector-Emitter

2SC2873SQ NPN Transistor Features SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the PNP Transistor 2SA1213SQ is Recommended. Equivalent Circuit 1.Base 2.Collector 3. Emitter Marking Code 2.Collector 2SC2873SQ-O MX 2SC2873SQ-Y MY 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless ot

2SC2873 NPN-Silicon General use Transistors 1W 1.5A 25V 4C 1B 2C 3E Applications Can be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Colle

2SC2873 SOT-89 NPN Transistors 3 Features 2 Small Flat Package 1.Base 1 High Speed Switching Time 2.Collector Low Collector-emitter saturation voltage 3.Emitter Complementary to 2SA1213 Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VC

Plastic-Encapsulate Transistors FEATURES 2SC2873 (NPN) Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time PC=1.0 to 2.0W Complementary to 2SA1213 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V 1. BASE Collector-Emitter Voltage VCEO 50 V 2. COLLECTO SOT-89 Emitter-Base

isc Silicon NPN Power Transistor 2SC2877 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1217 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. Suitable for output stage of 5