2SC2879 Datasheet and Replacement

2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100W PEP Power Gain : Gp = 13dB Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -24dB(Max.) (MIL Standard) MAXIMUM RATINGS

2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON BMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-b

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute

2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC2873 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1213 Maxim

MCC2SC2873-OTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2873-YPhone: (818) 701-4933Fax: (818) 701-4939Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

MCC2SC2873-OTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2873-YPhone: (818) 701-4933Fax: (818) 701-4939Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

2SC2873NPN Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-89FEATURES Low saturation voltage High speed switching time Complementary to 2SA1213 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V Millimeter Millimeter VCEO Collector-Emitter Voltage 50 V REF. REF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR (NPN) 1. BASE FEATURES Small Flat Package 2. COLLECTOR High Speed Switching Time 3. EMITTER Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25

2SC2873SOT- 89-3L TRANSISTOR (NPN)FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Col

SMD Type TransistorsNPN Transistors2SC2873 Features1.70 0.1 Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage0.42 0.1 Complementary to 2SA1213 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO

General Purpose Transistor2SC2873-G Series (NPN)RoHS DeviceFeatures - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.SOT-89-3LCircuit Diagram0.181(4.60)Collector0.173(4.40)1 : BASE 20.061(1.55)2 : COLLECTORREF.3 : EMITTER1Base0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 33Emitter0.020(0.52) 0.023(0.

General Purpose Transistor2SC2873-G Series (NPN)RoHS DeviceFeatures - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.SOT-89-3LCircuit Diagram0.181(4.60)Collector0.173(4.40)1 : BASE 20.061(1.55)2 : COLLECTORREF.3 : EMITTER1Base0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 33Emitter0.020(0.52) 0.023(0.

2SC2873Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOV Collector-Emitter

2SC2873SQ NPN TransistorFeatures SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the PNPTransistor 2SA1213SQ is Recommended.Equivalent Circuit 1.Base 2.Collector 3. EmitterMarking Code : 2.Collector2SC2873SQ-O : MX 2SC2873SQ-Y : MY 1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless ot

2SC2873NPN-Silicon General use Transistors1W 1.5A25V 4C1B 2C 3EApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 AColle

2SC2873 SOT-89 NPN Transistors 3 Features2 Small Flat Package1.Base1 High Speed Switching Time 2.Collector Low Collector-emitter saturation voltage 3.Emitter Complementary to 2SA1213 Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector - Base Voltage VCBO 50 Collector - Emitter Voltage VC

Plastic-Encapsulate TransistorsFEATURES2SC2873 (NPN) Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time PC=1.0 to 2.0W Complementary to 2SA1213Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 V1. BASECollector-Emitter Voltage VCEO 50 V2. COLLECTO SOT-89Emitter-Base

isc Silicon NPN Power Transistor 2SC2877DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1217Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5