2SC2881O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2881O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SC2881O
2SC2881O Datasheet (PDF)
2sc2881o 2sc2881y.pdf
2SC2881 Voltage Amplifier Applications Voltage Amplifier Applications Features High Voltage VCEO = 120V High Transition Frequency fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 * Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristics Ta = 25 REV.08 1 of 2 2SC2881 hFE Classification
2sc2881.pdf
2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = 120 V High transition frequency fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25 C) Cha
2sc2881-o 2sc2881-y.pdf
2SC2881-O/2SC2881-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=1mA, IE=0 Collector-Base Breakdown Voltage 120 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 120 V V(BR)EBO IE=1mA, IC=0 Emitter-Base Breakdown Voltage 5.0 V ICBO VCB=120V, IE=0 Collector-Base Cutoff Current 0.1 A IEBO VEB=5V, I
2sc2881-y.pdf
MCC 2SC2881-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2881-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet
Otros transistores... 2SC2878 , 2SC2878A , 2SC2878B , 2SC2879 , 2SC287A , 2SC288 , 2SC2880 , 2SC2881 , 2SC4793 , 2SC2881Y , 2SC2882 , 2SC2883 , 2SC2883O , 2SC2883Y , 2SC2884 , 2SC2885 , 2SC2886 .
History: 2SC3886A | AC550 | RN1967FE | BC378-8 | JC500P | 2SD1875 | DDTA123YE
History: 2SC3886A | AC550 | RN1967FE | BC378-8 | JC500P | 2SD1875 | DDTA123YE
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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