2SC2910 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2910
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC2910
2SC2910 Datasheet (PDF)
2sa1208 2sc2910 2sc2910.pdf
Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi
2sa1209 2sc2911 2sc2911.pdf
Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5
2sc2911.pdf
isc Silicon NPN Power Transistor 2SC2911DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1209Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM R
2sc2914.pdf
isc Silicon NPN Power Transistor 2SC2914DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc2913.pdf
isc Silicon NPN Power Transistor 2SC2913DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
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