2SC2910 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2910
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2SC2910 Transistor Equivalent Substitute - Cross-Reference Search
2SC2910 Datasheet (PDF)
2sa1208 2sc2910 2sc2910.pdf
Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi
2sa1209 2sc2911 2sc2911.pdf
Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5
2sc2911.pdf
isc Silicon NPN Power Transistor 2SC2911DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1209Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM R
2sc2914.pdf
isc Silicon NPN Power Transistor 2SC2914DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sc2913.pdf
isc Silicon NPN Power Transistor 2SC2913DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N1411
