2SC2930 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc Silicon NPN Power Transistor 2SC2938DESCRIPTIONHigh Collector-Emitter Sustaining Voltage: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Colle

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2934DESCRIPTIONHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2934 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE