2SC2999E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features Package Dimensions FBET series. unit mm Very small-sized package permitting sets to be small- 2033 sized and slim. [2SC2999] High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). B Base C Collector E Emitter SANYO SPA Specifications Absolute Maximum R

2SC2999 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter vo

SMD Type Transistors NPN Transistors 2SC2996 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle