2SC3051 Todos los transistores

 8.1. Size:318K  mcc
 2sc3052-g.pdf

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

 8.2. Size:318K  mcc
 2sc3052-f.pdf

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

 8.3. Size:318K  mcc
 2sc3052-e.pdf

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

 8.4. Size:640K  fuji
 2sc3059 2sc3060 2sc3061 2sc3178.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.5. Size:637K  secos
 2sc3052.pdf

2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. L Low collector to emitter saturation voltage 3 3 VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE Produc

 8.6. Size:310K  isahaya
 2sc3053.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

 8.7. Size:220K  isahaya
 2sc3052.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al

 8.8. Size:668K  jiangsu
 2sc3052.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR (NPN) FEATURES 1. BASE Low collector to emitter saturation voltage 2. EMITTER VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 3. COLLECTOR Excellent linearity of DC forward current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

 8.9. Size:42K  jmnic
 2sc3058.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

 8.10. Size:843K  htsemi
 2sc3052.pdf

2SC3052 TRANSISTOR (NPN) SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

 8.11. Size:237K  lge
 2sc3052 sot-23.pdf

2SC3052 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector

 8.12. Size:973K  kexin
 2sc3053.pdf

SMD Type Transistors NPN Transistors 2SC3053 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=25V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.13. Size:343K  kexin
 2sc3052.pdf

SMD Type Transistors NPN Transistors 2SC3052 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collec

 8.14. Size:165K  cn sptech
 2sc3058.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.15. Size:193K  inchange semiconductor
 2sc3055.pdf

isc Silicon NPN Power Transistor 2SC3055 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu

 8.16. Size:205K  inchange semiconductor
 2sc3058.pdf

isc Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu

 8.17. Size:210K  inchange semiconductor
 2sc3058a.pdf

isc Silicon NPN Power Transistor 2SC3058A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V ) 1 V@ I = 4A CE(sat C High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For switching regulator and DC/DC converter