All Transistors. 2SC3051 Datasheet

 

2SC3051 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3051
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO126

 2SC3051 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3051 Datasheet (PDF)

 8.1. Size:318K  mcc
2sc3052-g.pdf

2SC3051
2SC3051

2SC3052-EMCCTM Micro Commercial Components2SC3052-F20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3052-GPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Low collector

 8.2. Size:318K  mcc
2sc3052-f.pdf

2SC3051
2SC3051

2SC3052-EMCCTM Micro Commercial Components2SC3052-F20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3052-GPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Low collector

 8.3. Size:318K  mcc
2sc3052-e.pdf

2SC3051
2SC3051

2SC3052-EMCCTM Micro Commercial Components2SC3052-F20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3052-GPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Low collector

 8.4. Size:640K  fuji
2sc3059 2sc3060 2sc3061 2sc3178.pdf

2SC3051
2SC3051

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.5. Size:637K  secos
2sc3052.pdf

2SC3051
2SC3051

2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. L Low collector to emitter saturation voltage 33VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) Top View C B11 22K ECLASSIFICATION OF hFE Produc

 8.6. Size:310K  isahaya
2sc3053.pdf

2SC3051
2SC3051

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

 8.7. Size:220K  isahaya
2sc3052.pdf

2SC3051
2SC3051

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al

 8.8. Size:668K  jiangsu
2sc3052.pdf

2SC3051
2SC3051

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC3052 TRANSISTOR (NPN)FEATURES1. BASE Low collector to emitter saturation voltage2. EMITTERVCE(sat)=0.3V max(@IC=100mA,IB=10mA)3. COLLECTOR Excellent linearity of DC forward current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

 8.9. Size:42K  jmnic
2sc3058.pdf

2SC3051
2SC3051

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

 8.10. Size:843K  htsemi
2sc3052.pdf

2SC3051
2SC3051

2SC3052TRANSISTOR (NPN)SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

 8.11. Size:237K  lge
2sc3052 sot-23.pdf

2SC3051
2SC3051

2SC3052 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage 50 V VCEO Collector

 8.12. Size:973K  kexin
2sc3053.pdf

2SC3051
2SC3051

SMD Type TransistorsNPN Transistors2SC3053SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=25V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 8.13. Size:343K  kexin
2sc3052.pdf

2SC3051

SMD Type TransistorsNPN Transistors2SC3052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collec

 8.14. Size:165K  cn sptech
2sc3058.pdf

2SC3051
2SC3051

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3058DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.15. Size:193K  inchange semiconductor
2sc3055.pdf

2SC3051
2SC3051

isc Silicon NPN Power Transistor 2SC3055DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circu

 8.16. Size:205K  inchange semiconductor
2sc3058.pdf

2SC3051
2SC3051

isc Silicon NPN Power Transistor 2SC3058DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circu

 8.17. Size:210K  inchange semiconductor
2sc3058a.pdf

2SC3051
2SC3051

isc Silicon NPN Power Transistor 2SC3058ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V ) 1 V@ I = 4ACE(sat CHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor switching regulator and DC/DC converter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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