2SC3054
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3054
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 350
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SC3054
2SC3054
Datasheet (PDF)
8.1. Size:318K mcc
2sc3052-g.pdf 

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector
8.2. Size:318K mcc
2sc3052-f.pdf 

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector
8.3. Size:318K mcc
2sc3052-e.pdf 

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector
8.4. Size:640K fuji
2sc3059 2sc3060 2sc3061 2sc3178.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I
8.5. Size:637K secos
2sc3052.pdf 

2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. L Low collector to emitter saturation voltage 3 3 VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE Produc
8.6. Size:310K isahaya
2sc3053.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an
8.7. Size:220K isahaya
2sc3052.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al
8.8. Size:668K jiangsu
2sc3052.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR (NPN) FEATURES 1. BASE Low collector to emitter saturation voltage 2. EMITTER VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 3. COLLECTOR Excellent linearity of DC forward current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle
8.9. Size:42K jmnic
2sc3058.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI
8.10. Size:843K htsemi
2sc3052.pdf 

2SC3052 TRANSISTOR (NPN) SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base
8.11. Size:237K lge
2sc3052 sot-23.pdf 

2SC3052 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector
8.12. Size:973K kexin
2sc3053.pdf 

SMD Type Transistors NPN Transistors 2SC3053 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=25V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.13. Size:343K kexin
2sc3052.pdf 

SMD Type Transistors NPN Transistors 2SC3052 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collec
8.14. Size:165K cn sptech
2sc3058.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
8.15. Size:193K inchange semiconductor
2sc3055.pdf 

isc Silicon NPN Power Transistor 2SC3055 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu
8.16. Size:205K inchange semiconductor
2sc3058.pdf 

isc Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu
8.17. Size:210K inchange semiconductor
2sc3058a.pdf 

isc Silicon NPN Power Transistor 2SC3058A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V ) 1 V@ I = 4A CE(sat C High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For switching regulator and DC/DC converter
Otros transistores... 2SC3047
, 2SC3048
, 2SC3049
, 2SC305
, 2SC3050
, 2SC3051
, 2SC3052
, 2SC3053
, C3198
, 2SC3055
, 2SC3056
, 2SC3056A
, 2SC3057
, 2SC3058
, 2SC3058A
, 2SC3059
, 2SC306
.
History: MRF891
| FJN3301R
| 2SD389
| MS1649
| BUT36
| 2SD2182
| DTA044EEB