2SC3055 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3055DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circu

2SC3052-EMCCTM Micro Commercial Components2SC3052-F20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3052-GPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Low collector

2SC3052-EMCCTM Micro Commercial Components2SC3052-F20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3052-GPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Low collector

2SC3052-EMCCTM Micro Commercial Components2SC3052-F20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC3052-GPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Low collector

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2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. L Low collector to emitter saturation voltage 33VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) Top View C B11 22K ECLASSIFICATION OF hFE Produc

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC3052 TRANSISTOR (NPN)FEATURES1. BASE Low collector to emitter saturation voltage2. EMITTERVCE(sat)=0.3V max(@IC=100mA,IB=10mA)3. COLLECTOR Excellent linearity of DC forward current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

2SC3052TRANSISTOR (NPN)SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

2SC3052 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage 50 V VCEO Collector

SMD Type TransistorsNPN Transistors2SC3053SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=25V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC3052SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collec

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3058DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SC3058DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circu

isc Silicon NPN Power Transistor 2SC3058ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V ) 1 V@ I = 4ACE(sat CHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor switching regulator and DC/DC converter