2SC3055 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SC3055 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

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2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. L Low collector to emitter saturation voltage 3 3 VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE Produc

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR (NPN) FEATURES 1. BASE Low collector to emitter saturation voltage 2. EMITTER VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 3. COLLECTOR Excellent linearity of DC forward current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

2SC3052 TRANSISTOR (NPN) SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

2SC3052 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector

SMD Type Transistors NPN Transistors 2SC3053 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=25V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type Transistors NPN Transistors 2SC3052 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collec

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu

isc Silicon NPN Power Transistor 2SC3058A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V ) 1 V@ I = 4A CE(sat C High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For switching regulator and DC/DC converter