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2SC3058 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3058
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3
 

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2SC3058 Datasheet (PDF)

 ..1. Size:42K  jmnic
2sc3058.pdf pdf_icon

2SC3058

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

 ..2. Size:165K  cn sptech
2sc3058.pdf pdf_icon

2SC3058

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3058DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 ..3. Size:205K  inchange semiconductor
2sc3058.pdf pdf_icon

2SC3058

isc Silicon NPN Power Transistor 2SC3058DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(sus)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circu

 0.1. Size:210K  inchange semiconductor
2sc3058a.pdf pdf_icon

2SC3058

isc Silicon NPN Power Transistor 2SC3058ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V ) 1 V@ I = 4ACE(sat CHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor switching regulator and DC/DC converter

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MJE1103 | MJE31A

 

 
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