2SC3127 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3127 📄📄
Código: ID-_IO
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 9 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 180 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4500 MHz
Ganancia de corriente contínua (hFE): 90
Encapsulados: TO236
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2SC3127 datasheet
..1. Size:45K hitachi
2sc3127 2sc3128 2sc3510.pdf 
2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 1. Emitter 2. Base 2 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC3127*1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector t
..2. Size:1510K kexin
2sc3127.pdf
SMD Type Transistors NPN Transistors 2SC3127 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collecto
..3. Size:174K inchange semiconductor
2sc3127.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME
8.1. Size:293K toshiba
2sc3124.pdf
2SC3124 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3124 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 150 mW Ju
8.2. Size:335K toshiba
2sc3120.pdf
2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Colle
8.3. Size:298K toshiba
2sc3125.pdf
2SC3125 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector
8.4. Size:320K toshiba
2sc3123.pdf
2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications Unit mm High conversion gain Gce = 23dB (typ.) Low reverse transfer capacitance C = 0.4 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3
8.5. Size:311K toshiba
2sc3121.pdf
2SC3121 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3121 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) High transition frequency fT = 1500 MHz (typ.) Excellent linearity Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emi
8.6. Size:268K toshiba
2sc3122.pdf
2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 TV VHF RF Amplifier Applications Unit mm High gain Gpe = 24dB (typ.) (f = 200 MHz) Low noise NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter volta
8.7. Size:2531K kexin
2sc3124.pdf
SMD Type Transistors NPN Transistors 2SC3124 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.8. Size:2968K kexin
2sc3120.pdf
SMD Type Transistors NPN Transistors 2SC3120 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
8.9. Size:2537K kexin
2sc3125.pdf
SMD Type Transistors NPN Transistors 2SC3125 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
8.10. Size:2863K kexin
2sc3123.pdf
SMD Type Transistors NPN Transistors 2SC3123 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
8.11. Size:2589K kexin
2sc3121.pdf
SMD Type Transistors NPN Transistors 2SC3121 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector
8.12. Size:2517K kexin
2sc3122.pdf
SMD Type Transistors NPN Transistors 2SC3122 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.13. Size:180K inchange semiconductor
2sc3124.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3124 DESCRIPTION High Gain Bandwidth Product f = 1100 MHz TYP. T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO V Collec
8.14. Size:163K inchange semiconductor
2sc3125.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 DESCRIPTION Good Linearity of fT APPLICATIONS Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Curre
8.15. Size:187K inchange semiconductor
2sc3123.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION High Conversion Gain G = 23dB TYP. ce Low Reverse Transfer Capacitance C = 0.4pF TYP. re Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto
8.16. Size:180K inchange semiconductor
2sc3121.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3121 DESCRIPTION High Gain Bandwidth Product f = 1500 MHz TYP. T Excellent Linearity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner, UHF oscillator applications. TV tuner, UHF converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
8.17. Size:147K inchange semiconductor
2sc3122.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION High Gain- Gpe= 24dB TYP. @ f= 200MHz Low Noise- NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltag
Otros transistores... 2SC3119, 2SC3120, 2SC3121, 2SC3122, 2SC3123, 2SC3124, 2SC3125, 2SC3126, TIP127, 2SC3128, 2SC3129, 2SC313, 2SC3130, 2SC3131, 2SC3132, 2SC3133, 2SC3134
