2SC3130 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SC3130Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Small collector output capacitance Cob and common base reverse1transfer capacitance Crb. 3Mini type package, allowing downsizing of the equipment andautomatic insert

Transistor2SC3130Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Small collector output capacitance Cob and common base reverse1transfer capacitance Crb. 3Mini type package, allowing downsizing of the equipment andautomatic insert

SMD Type TransistorsNPN Transistors2SC3130SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications Unit: mmHigh Voltage Switching Applications High voltage: VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 20

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit: mm High voltage: VCBO = 200 V (max) V = 200 V (max) CEO Small flat package Complementary to 2SA1255 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO

Ordering number:ENN1048CPNP/NPN Epitaxial Planar Silicon Transistors2SA1252/2SC3134High VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2018B[2SA1252/2SC3134]0.40.1630 to 0.11 0.95 0.95 21.92.91 : Base2 : Emitter( ) : 2SA1252 3 : CollectorSANYO : CPSpecificationsAbsolute Maxim

Ordering number:EN1049DPNP/NPN Epitaxial Planar Silicon Transistors2SA1253/2SC3135High-hFE, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2033[2SA1253/2SC3135]B : BaseC : CollectorE : Emitter( ) : 2SA1253SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditi

SMD Type TransistorsNPN Transistors2SC3134SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features High VEBO. Wide ASO and high durability against breakdown.1 2 Complementary to 2SA1252+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta

SMD Type TransistorsNPN Transistors2SC3138SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=200V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1255+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto