2SC3130 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Small collector output capacitance Cob and common base reverse 1 transfer capacitance Crb. 3 Mini type package, allowing downsizing of the equipment and automatic insert

Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Small collector output capacitance Cob and common base reverse 1 transfer capacitance Crb. 3 Mini type package, allowing downsizing of the equipment and automatic insert

SMD Type Transistors NPN Transistors 2SC3130 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications Unit mm High Voltage Switching Applications High voltage VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit mm High voltage VCBO = 200 V (max) V = 200 V (max) CEO Small flat package Complementary to 2SA1255 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO

Ordering number ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2018B [2SA1252/2SC3134] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Base 2 Emitter ( ) 2SA1252 3 Collector SANYO CP Specifications Absolute Maxim

Ordering number EN1049D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2033 [2SA1253/2SC3135] B Base C Collector E Emitter ( ) 2SA1253 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditi

SMD Type Transistors NPN Transistors 2SC3134 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High VEBO. Wide ASO and high durability against breakdown. 1 2 Complementary to 2SA1252 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volta

SMD Type Transistors NPN Transistors 2SC3138 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=200V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1255 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto