2SC3146 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Darlington Power Transistor 2SC3146 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 3.5A FE C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed drivers applications. ABSOLUTE MAXIMUM RATINGS(T =

Ordering number EN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3149] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para

Ordering number EN1057B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions Very small-sized package permitting the 2SA1257/ unit mm 2SC3143-applied sets to be made small and slim. 2018A High breakdown voltage (VCEO 160V). [2SA1257/2SC3143] Small output capaci

Ordering number EN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features Package Dimensions High fT. unit mm High switching speed. 2010C Wide ASO. [2SA1259/2SC3145] JEDEC TO-220AB 1 Base EIAJ SC-46 2 Collector ( ) 2SA1259 3 Emitter Specifications Absolute Maximum Ratings at Ta = 2

Ordering number EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions FBET series. unit mm Compact package enabling compactness of sets. 2018A High fT and small cre (fT=750MHz typ, cre=0.6 typ). [2SC3142] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum R

UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SC3149S TRANSISTOR (NPN) 1.BASE FEATURES 2.COLLECTOR High Breakdown Voltage 3.EMITTER Fast Switching Speed Wide ASO (Safe Operating Area) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 1400 V VCEO Colle

JMnic Product Specification Silicon NPN Power Transistors 2SC3148 DESCRIPTION With TO-220C package High collector breakdown voltage VCEO=800V(Min) Excellent switching time tr=1.0 s(Max.) tf=1.0 s(Max.@IC=0.8A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 B

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

SMD Type Transistors NPN Transistors 2SC3143 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High breakdown voltage Small output capacitance. 1 2 Complementary to 2SA1257 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180

SMD Type Transistors NPN Transistors 2SC3142 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

isc Silicon NPN Power Transistor 2SC3148 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE

isc Silicon NPN Darlington Power Transistor 2SC3144 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Wide Area of Safe Operation Complement to Type 2SA1258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed drivers applications.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute