2SC3146 Datasheet and Replacement

isc Silicon NPN Darlington Power Transistor 2SC3146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 3.5AFE CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed drivers applications.ABSOLUTE MAXIMUM RATINGS(T =

Ordering number:EN1058DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1258/2SC314460V/3A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1258/2SC3144]JEDEC : TO-220AB 1 : Base( ) : 2SA1258 EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

Ordering number:EN1068CNPN Triple Diffused Planar Silicon Transistor2SC3149800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3149]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CPara

Ordering number:EN1057BPNP/NPN Epitaxial Planar Silicon Transistors2SA1257/2SC3143High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1257/unit:mm2SC3143-applied sets to be made small and slim.2018A High breakdown voltage (VCEO 160V).[2SA1257/2SC3143] Small output capaci

Ordering number:EN1059DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1259/2SC314560V/5A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1259/2SC3145]JEDEC : TO-220AB 1 : BaseEIAJ : SC-46 2 : Collector ( ) : 2SA12593 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 2

Ordering number:EN1066ANPN Epitaxial Planar Silicon Transistor2SC3142High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions FBET series.unit:mm Compact package enabling compactness of sets.2018A High fT and small cre (fT=750MHz typ, cre=0.6 typ).[2SC3142]C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximum R

UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SC3149S TRANSISTOR (NPN) 1.BASE FEATURES 2.COLLECTOR High Breakdown Voltage 3.EMITTER Fast Switching Speed Wide ASO (Safe Operating Area) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 1400 V VCEO Colle

JMnic Product Specification Silicon NPN Power Transistors 2SC3148 DESCRIPTION With TO-220C package High collector breakdown voltage: VCEO=800V(Min) Excellent switching time: tr=1.0s(Max.) tf=1.0s(Max.@IC=0.8A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 B

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage: VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum r

SMD Type TransistorsNPN Transistors2SC3143SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features High breakdown voltage Small output capacitance.1 2 Complementary to 2SA1257+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180

SMD Type TransistorsNPN Transistors2SC3142SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle

isc Silicon NPN Power Transistor 2SC3148DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE

isc Silicon NPN Darlington Power Transistor 2SC3144DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CWide Area of Safe OperationComplement to Type 2SA1258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed drivers applications.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage: VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute