2SC3169 Todos los transistores

 ..1. Size:59K  panasonic
 2sc3169.pdf

 ..2. Size:151K  jmnic
 2sc3169.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3169 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 ..3. Size:197K  inchange semiconductor
 2sc3169.pdf

isc Silicon NPN Power Transistor 2SC3169 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

 8.1. Size:145K  jmnic
 2sc3163.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION With TO-220C package High breakdown voltage High speed switching PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-e

 8.2. Size:151K  jmnic
 2sc3164.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect

 8.3. Size:735K  shindengen
 2sc3163.pdf

 8.4. Size:704K  shindengen
 2sc3164.pdf

 8.5. Size:180K  inchange semiconductor
 2sc3168.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SC3168 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 8.6. Size:196K  inchange semiconductor
 2sc3163.pdf

isc Silicon NPN Power Transistor 2SC3163 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.7. Size:122K  inchange semiconductor
 2sc3164.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U