2SC3175 Todos los transistores

 ..1. Size:48K  sanyo
 2sc3175.pdf

 ..2. Size:183K  inchange semiconductor
 2sc3175.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3175 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in high definition CRT display(V =12 to 24V) CC ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.1. Size:47K  sanyo
 2sc3173.pdf

 8.2. Size:33K  sanyo
 2sc3176.pdf

Ordering number EN1312B NPN Epitaxial Planar Silicon Transistor 2SC3176 CRT Horizontal Deflection Output Applications (with Damper Diode) Features Package Dimensions Fast switching speed. unit mm Especially suited for use in high-definition CRT 2010C display (VCC=12 to 24V). [2SC3176] Wide ASO. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC46 3 Emitter Specifi

 8.3. Size:640K  fuji
 2sc3059 2sc3060 2sc3061 2sc3178.pdf

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 8.4. Size:151K  jmnic
 2sc3170.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 8.5. Size:22K  sanken-ele
 2sc3179.pdf

2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC3179 Unit Symbol 2SC3179 Symbol Conditions Unit 0.2 4.8 0.2 10.2 0.1 VCBO 80 ICBO VCB=80V 100max A 2.0 V 100max A VCEO 60 IEBO VEB=6V

 8.6. Size:214K  inchange semiconductor
 2sc3179.pdf

isc Silicon NPN Power Transistor 2SC3179 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Complement to Type 2SA1262 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM

 8.7. Size:196K  inchange semiconductor
 2sc3171.pdf

isc Silicon NPN Power Transistor 2SC3171 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

 8.8. Size:197K  inchange semiconductor
 2sc3170.pdf

isc Silicon NPN Power Transistor 2SC3170 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

 8.9. Size:211K  inchange semiconductor
 2sc3177.pdf

isc Silicon NPN Power Transistor 2SC3177 DESCRIPTION With TO-126 packaging Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Relay drivers High-speed inverters Converters Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U