Справочник транзисторов. 2SC3175

 

Биполярный транзистор 2SC3175 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3175

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 400 V

Макcимальный постоянный ток коллектора (Ic): 7 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 80

Корпус транзистора: TO220

Аналоги (замена) для 2SC3175

 

 

2SC3175 Datasheet (PDF)

1.1. 2sc3175.pdf Size:48K _sanyo

2SC3175

4.1. 2sc3173.pdf Size:47K _sanyo

2SC3175

4.2. 2sc3176.pdf Size:33K _sanyo

2SC3175
2SC3175

Ordering number:EN1312B NPN Epitaxial Planar Silicon Transistor 2SC3176 CRT Horizontal Deflection Output Applications (with Damper Diode) Features Package Dimensions Fast switching speed. unit:mm Especially suited for use in high-definition CRT 2010C display (VCC=12 to 24V). [2SC3176] Wide ASO. 1 : Base JEDEC : TO-220AB 2 : Collector EIAJ : SC46 3 : Emitter Specification

 4.3. 2sc3059 2sc3060 2sc3061 2sc3178.pdf Size:640K _fuji

2SC3175
2SC3175

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

4.4. 2sc3170.pdf Size:151K _jmnic

2SC3175
2SC3175

JMnic Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltge APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open

 4.5. 2sc3179.pdf Size:22K _sanken-ele

2SC3175

2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application : Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) 2SC3179 Unit Symbol 2SC3179 Symbol Conditions Unit 0.2 4.8 0.2 10.2 0.1 VCBO 80 ICBO VCB=80V 100max A 2.0 V 100max A VCEO 60 IEBO VEB=6V V 60min V

4.6. 2sc3170.pdf Size:121K _inchange_semiconductor

2SC3175
2SC3175

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation voltage Ў¤ High breakdown voltge APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PA

4.7. 2sc3179.pdf Size:56K _inchange_semiconductor

2SC3175
2SC3175

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3179 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute ma

4.8. 2sc3171.pdf Size:82K _inchange_semiconductor

2SC3175
2SC3175

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3171 DESCRIPTION ·With TO-3PFa package ·High collector current ·High speed switching APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Обновления

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