2SC3179 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC3179 Unit Symbol 2SC3179 Symbol Conditions Unit 0.2 4.8 0.2 10.2 0.1 VCBO 80 ICBO VCB=80V 100max A 2.0 V 100max A VCEO 60 IEBO VEB=6V

isc Silicon NPN Power Transistor 2SC3179 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Complement to Type 2SA1262 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM

Ordering number EN1312B NPN Epitaxial Planar Silicon Transistor 2SC3176 CRT Horizontal Deflection Output Applications (with Damper Diode) Features Package Dimensions Fast switching speed. unit mm Especially suited for use in high-definition CRT 2010C display (VCC=12 to 24V). [2SC3176] Wide ASO. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC46 3 Emitter Specifi

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

JMnic Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

isc Silicon NPN Power Transistor 2SC3171 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3170 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3177 DESCRIPTION With TO-126 packaging Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Relay drivers High-speed inverters Converters Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3175 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in high definition CRT display(V =12 to 24V) CC ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET