2SC3226 Todos los transistores

 

2SC3226 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3226

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 30 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Ganancia de corriente contínua (hfe): 120

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SC3226

 

2SC3226 Datasheet (PDF)

4.1. 2sc3225.pdf Size:212K _toshiba

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5.1. 2sa1306b 2sc3298b.pdf Size:397K _motorola

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5.2. 2sc3268.pdf Size:350K _toshiba

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2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) • NF = 2dB, |S |2 = 9.5dB (f = 1000 MHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base vol

 5.3. 2sc3298b.pdf Size:109K _toshiba

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5.4. 2sc3258.pdf Size:136K _toshiba

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 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 5.5. 2sc3266.pdf Size:215K _toshiba

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2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 2 A) C • Complementary to 2SA1296 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20

5.6. 2sc3299.pdf Size:122K _toshiba

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 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.7. 2sc3257.pdf Size:140K _toshiba

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 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.8. 2sc3295.pdf Size:250K _toshiba

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2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit: mm Switching Applications • High hFE: h = 600~3600 FE • High voltage: V = 50 V CEO • High collector current: I = 150 mA (max) C • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage V

5.9. 2sc3265.pdf Size:189K _toshiba

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2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit: mm Power Switching Applications • High DC current gain: hFE (1) = 100~320 • Low saturation voltage: V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B • Complementary to 2SA1298 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol

5.10. 2sc3279.pdf Size:205K _toshiba

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2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : h = 140~600 (V = 1 V, I = 0.5 A) FE (1) CE C : h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C • Low saturation voltage: V = 0.5 V (max) CE (sat) (I = 2 A, I = 5

5.11. 2sc3233.pdf Size:150K _toshiba

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2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max) t = 1.0 µs (max), (I = 0.8 A) f C • High collector breakdown voltage: V = 400 V CEO Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

5.12. 2sc3267.pdf Size:224K _toshiba

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2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) @I = 2 A C • Complementary to 2SA1297 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20

5.13. 2sc3256.pdf Size:98K _sanyo

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Ordering number:EN2370 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1292/2SC3256 60V/15A High-Speed Switching Applications Applications Package Dimensions · Various inductance, lamp drivers for electrical unit:mm equipment. 2022 · Inverters, converters (strobo, flash, fluorescent lamp [2SA1292/2SC3256] lighting circuit). · Power amp (high-power care stereo, motor control).

5.14. 2sc3292.pdf Size:33K _sanyo

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Ordering number:EN1332A NPN Planar Type Silicon Darlington Transistor 2SC3292 For General-Purpose Drivers Applications Package Dimensions · Especially suited for use in switching of L load unit:mm motor driver, printer hammer driver, relay driver, etc. 2010C [2SC3292] Features · High DC current gain. · Large current capacity and wide ASO. · Contains 60±10V Zener diode betw

5.15. 2sc3254.pdf Size:103K _sanyo

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Ordering number:EN1200C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1290/2SC3254 60V/7A High-Speed Switching Applications Applications Package Dimensions · Various inductance lamp drivers for electrical unit:mm equipment. 2010B · Inverters, converters (strobo, flash, fluorescent lamp [2SA1290/2SC3254] lighting circuit). · Power amp (high power car stereo, motor controller)

5.16. 2sc3294.pdf Size:31K _sanyo

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Ordering number:EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications Package Dimensions · Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3294] Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · U

5.17. 2sc3277.pdf Size:101K _sanyo

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Ordering number:EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions · High breakdown voltage, high current. unit:mm · Wide ASO. 2022A · Fast switching speed. [2SC3277] 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Condi

5.18. 2sc3293.pdf Size:39K _sanyo

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Ordering number:EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications Package Dimensions · Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3293] Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and b

5.19. 2sc3253.pdf Size:104K _sanyo

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Ordering number:EN1199C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications Package Dimensions · Various inductance lamp drivers for electrical unit:mm equipment. 2010B · Inverters, converters (strobo, flash, fluorescent lamp [2SA1289/2SC3253] lighting circuit). · Power amp (high power car stereo, motor controller)

5.20. 2sc3255.pdf Size:103K _sanyo

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Ordering number:EN1201C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications Package Dimensions · Various inductance lamp drivers for electrical unit:mm equipment. 2010B · Inverters, converters (strobo, flash, fluorescent lamp [2SA1291/2SC3255] lighting circuit). · Power amp (high power car stereo, motor controller

5.21. 2sc3209.pdf Size:59K _nec

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5.22. 2sc3218-m.pdf Size:121K _nec

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5.23. 2sc3272.pdf Size:94K _rohm

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5.24. 2sc3270.pdf Size:105K _rohm

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5.25. 2sc3271f.pdf Size:61K _rohm

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2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units: mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.3

5.26. 2sc3279-m.pdf Size:269K _mcc

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2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone: (818) 701-4933 2SC3279-P Fax: (818) 701-4939 Features • High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors • E

5.27. 2sc3279-n.pdf Size:269K _mcc

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2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone: (818) 701-4933 2SC3279-P Fax: (818) 701-4939 Features • High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors • E

5.28. 2sc3279-p.pdf Size:269K _mcc

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2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone: (818) 701-4933 2SC3279-P Fax: (818) 701-4939 Features • High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors • E

5.29. 2sc3265-o.pdf Size:322K _mcc

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MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General • Power switching application • Complementary to 2SA1298 Purpose Amplifier • Low f

5.30. 2sc3265-y.pdf Size:322K _mcc

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MCC TM Micro Commercial Components 2SC3265-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3265-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General • Power switching application • Complementary to 2SA1298 Purpose Amplifier • Low f

5.31. 2sc3279-l.pdf Size:269K _mcc

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2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone: (818) 701-4933 2SC3279-P Fax: (818) 701-4939 Features • High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors • E

5.32. 2sc3212.pdf Size:81K _panasonic

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5.33. 2sc3281.pdf Size:134K _mospec

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A A A

5.34. 2sc3210.pdf Size:75K _no

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5.35. 2sc3245.pdf Size:35K _no

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5.36. 2sc3279.pdf Size:289K _secos

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2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC32

5.37. 2sc3280.pdf Size:25K _wingshing

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2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING (Ta=25°C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collec

5.38. 2sc3247.pdf Size:144K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs ! ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

5.39. 2sc3249.pdf Size:99K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs ! ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

5.40. 2sc3242.pdf Size:150K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs ! ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

5.41. 2sc3243.pdf Size:27K _jiangsu

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 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC3243 TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 123 V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

5.42. 2sc3212.pdf Size:156K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212

5.43. 2sc3281.pdf Size:190K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1302 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3

5.44. 2sc3210.pdf Size:152K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

5.45. 2sc3297.pdf Size:136K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION · ·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

5.46. 2sc3298 2sc3298a 2sc3298b.pdf Size:159K _jmnic

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Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIO

5.47. 2sc3296.pdf Size:195K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION · ·With TO-220Fa package ·Wide area of safe operation ·Complement to type 2SA1304 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

5.48. 2sc3214.pdf Size:147K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VA

5.49. 2sc3203.pdf Size:41K _kec

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5.53. 2sc3202.pdf Size:46K _kec

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5.54. 2sc3263.pdf Size:28K _sanken-ele

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LAPT 2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 4.8 ±0.4 15.6 ±0.1 VCBO 230 V ICBO VCB=230V 100max µ A 9.6 2.0 IEBO VCEO 230 V VEB=5V 100max µ

5.55. 2sc3264.pdf Size:28K _sanken-ele

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LAPT 2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Symbol Conditions Ratings Unit Unit ±0.2 6.0 ±0.3 36.4 VCBO 230 ICBO VCB=230V 100max µ A V ±0.2 24.4 2.1 ±0.1 2-ø3.2 VCEO 230 IEBO VEB

5.56. 2sc3284.pdf Size:28K _sanken-ele

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LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose (Ta=25°C) Absolute maximum ratings (Ta=25°C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Symbol Conditions Ratings Unit Unit ±0.2 4.8 ±0.4 15.6 ±0.1 VCBO 150 ICBO VCB=150V 100max µ A 9.6 2.0 V VCEO 150 IEBO VEB=5V 100max µ

5.57. 2sc3279 to-92.pdf Size:274K _lge

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 2SC3279(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi

5.58. 2sc3268.pdf Size:1289K _kexin

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SMD Type Transistors NPN Transistors 2SC3268 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=70mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

5.59. 2sc3295.pdf Size:2229K _kexin

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SMD Type Transistors NPN Transistors 2SC3295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

5.60. 2sc3265.pdf Size:979K _kexin

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SMD Type Transistors NPN Transistors 2SC3265 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High DC current gain ● Low saturation voltage 1 2 +0.1 ● Complementary to 2SA1298 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Coll

5.61. 2sc3279 3da3279.pdf Size:214K _foshan

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2SC3279(3DA3279) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大电路。 Purpose: Medium power amplifier applications. 特点:高直流电增益,放大特性好,饱和压降低。 Features: High DC current gain and excellent h linearity, low saturation voltage. FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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