All Transistors. 2SC3226 Datasheet

 

2SC3226 Datasheet and Replacement


   Type Designator: 2SC3226
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
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2SC3226 Datasheet (PDF)

 8.1. Size:361K  1
 2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf pdf_icon

2SC3226

 8.2. Size:212K  toshiba
 2sc3225.pdf pdf_icon

2SC3226

 8.3. Size:91K  inchange semiconductor
 2sc3220.pdf pdf_icon

2SC3226

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

 8.4. Size:179K  inchange semiconductor
 2sc3229.pdf pdf_icon

2SC3226

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3229DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter andgeneral purpose applications.ABSOLUTE MAX

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG332 | 2N2904 | DTC124EEB | ECG185 | 2SA1488 | NXP3875G | 2N5784

Keywords - 2SC3226 transistor datasheet

 2SC3226 cross reference
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