2SC3256R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3256R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de transistor bipolar 2SC3256R
2SC3256R
Datasheet (PDF)
7.1. Size:98K sanyo
2sc3256.pdf
Ordering number:EN2370PNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022 Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit). Power amp (high-power care stereo, motor control).
7.2. Size:203K inchange semiconductor
2sc3256.pdf
isc Silicon NPN Power Transistor 2SC3256DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.2. Size:140K toshiba
2sc3257.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:136K toshiba
2sc3258.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:103K sanyo
2sc3254.pdf
Ordering number:EN1200CPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit). Power amp (high power car stereo, motor controller)
8.5. Size:103K sanyo
2sc3255.pdf
Ordering number:EN1201CPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit). Power amp (high power car stereo, motor controller
8.6. Size:104K sanyo
2sc3253.pdf
Ordering number:EN1199CPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010B Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit). Power amp (high power car stereo, motor controller)
8.7. Size:199K inchange semiconductor
2sc3254.pdf
isc Silicon NPN Power Transistor 2SC3254DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1290Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.8. Size:192K inchange semiconductor
2sc3257.pdf
isc Silicon NPN Power Transistor 2SC3257DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.9. Size:216K inchange semiconductor
2sc3255.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3255DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifi
8.10. Size:199K inchange semiconductor
2sc3258.pdf
isc Silicon NPN Power Transistor 2SC3258DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1293Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
8.11. Size:183K inchange semiconductor
2sc3250.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3250DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgenera
8.12. Size:198K inchange semiconductor
2sc3252.pdf
isc Silicon NPN Power Transistor 2SC3252DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1288Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
8.13. Size:198K inchange semiconductor
2sc3253.pdf
isc Silicon NPN Power Transistor 2SC3253DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1289Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifierSwitching regulato
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