2SC3299Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3299DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 50V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1307Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V

Ordering number:EN1332ANPN Planar Type Silicon Darlington Transistor2SC3292For General-Purpose DriversApplications Package Dimensions Especially suited for use in switching of L loadunit:mmmotor driver, printer hammer driver, relay driver, etc.2010C[2SC3292]Features High DC current gain. Large current capacity and wide ASO. Contains 6010V Zener diode betw

Ordering number:EN1333CNPN Planar Silicon Darlington Transistor2SC3293Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3293]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand b

Ordering number:EN1422CNPN Planar Silicon Transistor2SC3294Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3294]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand base. U

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

SMD Type TransistorsNPN Transistors2SC3295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

isc Silicon NPN Power Transistors 2SC3298/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298A= 200V(Min)-2SC3298BComplement to Type 2SA1306/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

isc Silicon NPN Power Transistor 2SC3296TDESCRIPTIONTCollector-Emitter Breakdown Voltage-: VB B= 150V(Min)(BR)CEOComplement to Type 2SA1304Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationTAPPLICATIONSTPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITVB

isc Silicon NPN Power Transistors 2SC3298BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOComplement to Type 2SA1306BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYM

isc Silicon NPN Power Transistor 2SC3298 A BDESCRIPTIONWith TO-220F packagingComplement to Type 2SA1306 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC3298 160V Collector-Base Voltage 2

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC3298/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298AComplement to Type 2SA1306/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifie

isc Silicon NPN Power Transistor 2SC3297DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1305Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio, car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(