2SC3299Y - описание и поиск аналогов

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3299 DESCRIPTION Collector-Emitter Breakdown Voltage V = 50V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1307 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit mm Switching Applications High hFE h = 600 3600 FE High voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage V

Ordering number EN1332A NPN Planar Type Silicon Darlington Transistor 2SC3292 For General-Purpose Drivers Applications Package Dimensions Especially suited for use in switching of L load unit mm motor driver, printer hammer driver, relay driver, etc. 2010C [2SC3292] Features High DC current gain. Large current capacity and wide ASO. Contains 60 10V Zener diode betw

Ordering number EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3293] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and b

Ordering number EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3294] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and base. U

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

SMD Type Transistors NPN Transistors 2SC3295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B Complement to Type 2SA1306/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif

isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT Collector-Emitter Breakdown Voltage- VB B= 150V(Min) (BR)CEO Complement to Type 2SA1304 Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB

isc Silicon NPN Power Transistors 2SC3298B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA1306B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYM

isc Silicon NPN Power Transistor 2SC3298 A B DESCRIPTION With TO-220F packaging Complement to Type 2SA1306 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC3298 160 V Collector-Base Voltage 2

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3298/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A Complement to Type 2SA1306/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifie

isc Silicon NPN Power Transistor 2SC3297 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1305 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio, car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(