2SC3316 Todos los transistores

 8.1. Size:263K  1
 2sc3311 2sc3311a.pdf

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

 8.2. Size:44K  toshiba
 2sc3310.pdf

This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:37K  panasonic
 2sc3313.pdf

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE

 8.4. Size:48K  panasonic
 2sc3315 e.pdf

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V

 8.5. Size:45K  panasonic
 2sc3314.pdf

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t

 8.6. Size:36K  panasonic
 2sc3311.pdf

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to

 8.7. Size:37K  panasonic
 2sc3312.pdf

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit

 8.8. Size:40K  panasonic
 2sc3313 e.pdf

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE

 8.9. Size:40K  panasonic
 2sc3311a e.pdf

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to

 8.10. Size:44K  panasonic
 2sc3315.pdf

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V

 8.11. Size:41K  panasonic
 2sc3312 e.pdf

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit

 8.12. Size:49K  panasonic
 2sc3314 e.pdf

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t

 8.13. Size:216K  fuji
 2sc3318.pdf

FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C

 8.14. Size:110K  jiangsu
 2sc3311a.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo

 8.15. Size:219K  inchange semiconductor
 2sc3318.pdf

isc Silicon NPN Power Transistor 2SC3318 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

 8.16. Size:193K  inchange semiconductor
 2sc3317.pdf

isc Silicon NPN Power Transistor 2SC3317 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.17. Size:196K  inchange semiconductor
 2sc3310.pdf

isc Silicon NPN Power Transistor 2SC3310 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a