2SC3316 Specs and Replacement
Type Designator: 2SC3316
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC3316 datasheet
8.1. Size:263K 1
2sc3311 2sc3311a.pdf 
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request... See More ⇒
8.2. Size:44K toshiba
2sc3310.pdf
This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.3. Size:37K panasonic
2sc3313.pdf
Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE... See More ⇒
8.4. Size:48K panasonic
2sc3315 e.pdf
Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V ... See More ⇒
8.5. Size:45K panasonic
2sc3314.pdf
Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t... See More ⇒
8.6. Size:36K panasonic
2sc3311.pdf
Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to ... See More ⇒
8.7. Size:37K panasonic
2sc3312.pdf
Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit... See More ⇒
8.8. Size:40K panasonic
2sc3313 e.pdf
Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE... See More ⇒
8.9. Size:40K panasonic
2sc3311a e.pdf
Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to ... See More ⇒
8.10. Size:44K panasonic
2sc3315.pdf
Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V ... See More ⇒
8.11. Size:41K panasonic
2sc3312 e.pdf
Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit... See More ⇒
8.12. Size:49K panasonic
2sc3314 e.pdf
Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t... See More ⇒
8.13. Size:216K fuji
2sc3318.pdf
FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C ... See More ⇒
8.14. Size:110K jiangsu
2sc3311a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo... See More ⇒
8.15. Size:219K inchange semiconductor
2sc3318.pdf
isc Silicon NPN Power Transistor 2SC3318 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI... See More ⇒
8.16. Size:193K inchange semiconductor
2sc3317.pdf
isc Silicon NPN Power Transistor 2SC3317 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
8.17. Size:196K inchange semiconductor
2sc3310.pdf
isc Silicon NPN Power Transistor 2SC3310 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
Detailed specifications: 2SC3309, 2SC331, 2SC3310, 2SC3311, 2SC3312, 2SC3313, 2SC3314, 2SC3315, A1013, 2SC3317, 2SC3318, 2SC3319, 2SC332, 2SC3320, 2SC3321, 2SC3322, 2SC3323
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