2SC3319 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3319
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 500 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 45
Encapsulados: TO3
Búsqueda de reemplazo de 2SC3319
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2SC3319 datasheet
8.1. Size:263K 1
2sc3311 2sc3311a.pdf 
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request
8.2. Size:44K toshiba
2sc3310.pdf
This Material Copyrighted By Its Respective Manufacturer
8.3. Size:37K panasonic
2sc3313.pdf
Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE
8.4. Size:48K panasonic
2sc3315 e.pdf
Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V
8.5. Size:45K panasonic
2sc3314.pdf
Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t
8.6. Size:36K panasonic
2sc3311.pdf
Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to
8.7. Size:37K panasonic
2sc3312.pdf
Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit
8.8. Size:40K panasonic
2sc3313 e.pdf
Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE
8.9. Size:40K panasonic
2sc3311a e.pdf
Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to
8.10. Size:44K panasonic
2sc3315.pdf
Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V
8.11. Size:41K panasonic
2sc3312 e.pdf
Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit
8.12. Size:49K panasonic
2sc3314 e.pdf
Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector t
8.13. Size:216K fuji
2sc3318.pdf
FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C
8.14. Size:110K jiangsu
2sc3311a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo
8.15. Size:219K inchange semiconductor
2sc3318.pdf
isc Silicon NPN Power Transistor 2SC3318 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
8.16. Size:193K inchange semiconductor
2sc3317.pdf
isc Silicon NPN Power Transistor 2SC3317 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 )
8.17. Size:196K inchange semiconductor
2sc3310.pdf
isc Silicon NPN Power Transistor 2SC3310 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Otros transistores... 2SC3311
, 2SC3312
, 2SC3313
, 2SC3314
, 2SC3315
, 2SC3316
, 2SC3317
, 2SC3318
, 2SC2655
, 2SC332
, 2SC3320
, 2SC3321
, 2SC3322
, 2SC3323
, 2SC3324
, 2SC3324BL
, 2SC3324GR
.
History: ECG369
| 2SA1052C
| BSX60
| BTA1020K3
| BSW61
| ZTX212BK
| BSW62
