All Transistors. 2SC3319 Datasheet

 

2SC3319 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3319

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO3

2SC3319 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3319 Datasheet (PDF)

4.1. 2sc3310.pdf Size:44K _toshiba

2SC3319

 This Material Copyrighted By Its Respective Manufacturer

4.2. 2sc3315.pdf Size:44K _panasonic

2SC3319
2SC3319

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 1.27

 4.3. 2sc3314.pdf Size:45K _panasonic

2SC3319
2SC3319

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to bas

4.4. 2sc3312.pdf Size:37K _panasonic

2SC3319
2SC3319

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter v

 4.5. 2sc3313.pdf Size:37K _panasonic

2SC3319
2SC3319

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20

4.6. 2sc3312 e.pdf Size:41K _panasonic

2SC3319
2SC3319

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter v

4.7. 2sc3315 e.pdf Size:48K _panasonic

2SC3319
2SC3319

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 1.27

4.8. 2sc3311a e.pdf Size:40K _panasonic

2SC3319
2SC3319

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base

4.9. 2sc3314 e.pdf Size:49K _panasonic

2SC3319
2SC3319

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1323 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to bas

4.10. 2sc3311.pdf Size:36K _panasonic

2SC3319
2SC3319

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base

4.11. 2sc3313 e.pdf Size:40K _panasonic

2SC3319
2SC3319

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20

4.12. 2sc3318.pdf Size:216K _fuji

2SC3319
2SC3319

FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unle

4.13. 2sc3311a.pdf Size:110K _jiangsu

2SC3319

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo

4.14. 2sc3310.pdf Size:179K _inchange_semiconductor

2SC3319
2SC3319

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3310 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High collector breakdown voltage Ў¤ Excellent Switching times APPLICATIONS Ў¤ Switching regulator Ў¤ High speed DC-DC converter Ў¤ High voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Ў¤ Absolute maximum ratings(Ta=25Ўж

4.15. 2sc3317.pdf Size:179K _inchange_semiconductor

2SC3319
2SC3319

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2

4.16. 2sc3318.pdf Size:178K _inchange_semiconductor

2SC3319
2SC3319

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3318 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage ,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DES

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 
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