All Transistors. 2SC3319 Datasheet

 

2SC3319 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3319

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO3

2SC3319 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3319 Datasheet (PDF)

8.1. 2sc3310.pdf Size:44K _toshiba

2SC3319

 This Material Copyrighted By Its Respective Manufacturer

8.2. 2sc3314 e.pdf Size:49K _panasonic

2SC3319
2SC3319

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1323 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25˚C) 1 2 3 Parameter Symbol Ratings Unit Collector t

 8.3. 2sc3313 e.pdf Size:40K _panasonic

2SC3319
2SC3319

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE

8.4. 2sc3315 e.pdf Size:48K _panasonic

2SC3319
2SC3319

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25˚C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V

 8.5. 2sc3313.pdf Size:37K _panasonic

2SC3319
2SC3319

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCE

8.6. 2sc3315.pdf Size:44K _panasonic

2SC3319
2SC3319

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25˚C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V

8.7. 2sc3312.pdf Size:37K _panasonic

2SC3319
2SC3319

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit

8.8. 2sc3311.pdf Size:36K _panasonic

2SC3319
2SC3319

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to

8.9. 2sc3311a e.pdf Size:40K _panasonic

2SC3319
2SC3319

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to

8.10. 2sc3314.pdf Size:45K _panasonic

2SC3319
2SC3319

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1323 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25˚C) 1 2 3 Parameter Symbol Ratings Unit Collector t

8.11. 2sc3312 e.pdf Size:41K _panasonic

2SC3319
2SC3319

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emit

8.12. 2sc3318.pdf Size:216K _fuji

2SC3319
2SC3319

FUJI POWER TRANSISTOR 2SC3318 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters JEDEC - General purpose power amplifiers EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C

8.13. 2sc3311a.pdf Size:110K _jiangsu

2SC3319

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Optimum for High-density Mounting 3. BASE Allowing Supply with the Radial Taping Complementary to 2SA1309A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Vo

Datasheet: 2SC3311 , 2SC3312 , 2SC3313 , 2SC3314 , 2SC3315 , 2SC3316 , 2SC3317 , 2SC3318 , TIP41 , 2SC332 , 2SC3320 , 2SC3321 , 2SC3322 , 2SC3323 , 2SC3324 , 2SC3324BL , 2SC3324GR .

 

 
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