2SC3336 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3336
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 500 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 45
Encapsulados: TO3P
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2SC3336 datasheet
2sc3336.pdf
2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 15 A Collector
2sc3336.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3336 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3333.pdf
2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = 250 V Low C 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitt
Otros transistores... 2SC3332R , 2SC3332S , 2SC3332T , 2SC3332U , 2SC3332V , 2SC3333 , 2SC3334 , 2SC3335 , 2N3055 , 2SC3337 , 2SC3338 , 2SC3339 , 2SC334 , 2SC3340 , 2SC3341 , 2SC3342 , 2SC3343 .
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