All Transistors. 2SC3336 Datasheet

 

2SC3336 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3336

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO3P

2SC3336 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3336 Datasheet (PDF)

1.1. 2sc3336.pdf Size:41K _hitachi

2SC3336
2SC3336

2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 15 A Collector pea

1.2. 2sc3336.pdf Size:151K _inchange_semiconductor

2SC3336
2SC3336

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3336 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ High voltage,high speed APPLICATIONS Ў¤ For high voltage ; high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum rat

 4.1. 2sc3334.pdf Size:211K _toshiba

2SC3336
2SC3336



4.2. 2sc3333.pdf Size:288K _toshiba

2SC3336
2SC3336

2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications • High voltage: VCEO = 250 V • Low C : 1.8 pF (max) re • Complementary to 2SA1320 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitt

 4.3. 2sc3331.pdf Size:451K _sanyo

2SC3336
2SC3336

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sc3330.pdf Size:144K _sanyo

2SC3336
2SC3336

 4.5. 2sc3332.pdf Size:97K _sanyo

2SC3336
2SC3336

Ordering number:ENN1334D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions Hgih breakdown voltage. unit:mm Excellent hFE linearity. 2003B Wide ASO and highly resistant to breakdown. [2SA1319/2SC3332] Adoption of MBIT process. 5.0 4.0 4.0 Switching Test Circuit IB1 PW=20s OUTPUT D.C.?1% RB 0.

4.6. 2sc3338.pdf Size:24K _hitachi

2SC3336
2SC3336

2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation

4.7. 2sc3330m.pdf Size:903K _blue-rocket-elect

2SC3336
2SC3336

2SC3330M(BR3DG3330M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 电流容量大,有宽阔的安全工作区。 Large current capacity and wide ASO. 用途 / Applications 用于低频、高频放大电路。 Capable of being used in the low frequency to hi

4.8. 2sc3338.pdf Size:304K _kexin

2SC3336

SMD Type Transistors NPN Transistors 2SC3338 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE

Datasheet: 2SC3332R , 2SC3332S , 2SC3332T , 2SC3332U , 2SC3332V , 2SC3333 , 2SC3334 , 2SC3335 , TIP31 , 2SC3337 , 2SC3338 , 2SC3339 , 2SC334 , 2SC3340 , 2SC3341 , 2SC3342 , 2SC3343 .

 
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