2SC3336 Specs and Replacement
Type Designator: 2SC3336
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO3P
2SC3336 Substitution
2SC3336 datasheet
2sc3336.pdf
2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 15 A Collector... See More ⇒
2sc3336.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3336 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
2sc3333.pdf
2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit mm Color TV Chroma Output Applications High voltage VCEO = 250 V Low C 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 250 V Collector-emitt... See More ⇒
Detailed specifications: 2SC3332R , 2SC3332S , 2SC3332T , 2SC3332U , 2SC3332V , 2SC3333 , 2SC3334 , 2SC3335 , 2N3055 , 2SC3337 , 2SC3338 , 2SC3339 , 2SC334 , 2SC3340 , 2SC3341 , 2SC3342 , 2SC3343 .
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