2SC3398 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type TransistorsNPN Transistors2SC3398SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01 Complementary to 2SA1344+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o

Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test

2SC3391Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Mixer, Local oscillatorOutlineSPAK1. Emitter122. Collector33. Base2SC3391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 20

2SC3390Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip

SMD Type TransistorsNPN Transistors2SC3397SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 Complementary to 2SA1343 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsNPN Transistors2SC3392SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High breakdown voltage Large current capacitiy and high fT.1 2 High-Speed Switching Applications+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SA13381.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type TransistorsNPN Transistors2SC3396SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1342+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SC3395SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SA13411.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector