2SC3399 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3399
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250(typ) MHz
Capacitancia de salida (Cc): 3.6 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: SPA
Búsqueda de reemplazo de transistor bipolar 2SC3399
2SC3399 Datasheet (PDF)
2sc3397.pdf
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2sa1339 2sc3393.pdf
Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o
2sa1338 2sc3392.pdf
Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test
2sc3391.pdf
2SC3391Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Mixer, Local oscillatorOutlineSPAK1. Emitter122. Collector33. Base2SC3391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 20
2sc3390.pdf
2SC3390Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip
2sc3397.pdf
SMD Type TransistorsNPN Transistors2SC3397SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 Complementary to 2SA1343 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto
2sc3392.pdf
SMD Type TransistorsNPN Transistors2SC3392SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High breakdown voltage Large current capacitiy and high fT.1 2 High-Speed Switching Applications+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SA13381.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symb
2sc3398.pdf
SMD Type TransistorsNPN Transistors2SC3398SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01 Complementary to 2SA1344+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc3396.pdf
SMD Type TransistorsNPN Transistors2SC3396SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1342+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sc3395.pdf
SMD Type TransistorsNPN Transistors2SC3395SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SA13411.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
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