2SC3399 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC3399
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250(typ) MHz
   Capacitancia de salida (Cc): 3.6 pF
   Ganancia de corriente contínua (hfe): 45
   Paquete / Cubierta: SPA

Búsqueda de reemplazo de transistor bipolar 2SC3399

2SC3399 Datasheet (PDF)

..1. Size:86K sanyo
2sa1345 2sc3399.pdf

8.1. Size:331K sanyo
2sc3397.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.2. Size:139K sanyo
2sa1339 2sc3393.pdf

Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o

8.3. Size:155K sanyo
2sa1338 2sc3392.pdf

Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test

8.4. Size:80K sanyo
2sc3396.pdf

8.5. Size:24K hitachi
2sc3391.pdf

2SC3391Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Mixer, Local oscillatorOutlineSPAK1. Emitter122. Collector33. Base2SC3391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 20

8.6. Size:24K hitachi
2sc3390.pdf

2SC3390Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip

8.7. Size:2189K kexin
2sc3397.pdf

SMD Type TransistorsNPN Transistors2SC3397SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 Complementary to 2SA1343 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

8.8. Size:1547K kexin
2sc3392.pdf

SMD Type TransistorsNPN Transistors2SC3392SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High breakdown voltage Large current capacitiy and high fT.1 2 High-Speed Switching Applications+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SA13381.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symb

8.9. Size:2363K kexin
2sc3398.pdf

SMD Type TransistorsNPN Transistors2SC3398SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01 Complementary to 2SA1344+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

8.10. Size:2408K kexin
2sc3396.pdf

SMD Type TransistorsNPN Transistors2SC3396SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1342+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

8.11. Size:2169K kexin
2sc3395.pdf

SMD Type TransistorsNPN Transistors2SC3395SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SA13411.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

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