2SC3412 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3412
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1200 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: TO3
Búsqueda de reemplazo de transistor bipolar 2SC3412
2SC3412 Datasheet (PDF)
1.1. 2sc3412.pdf 
Size:208K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 500V (Min) (BR)CEO ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vol
4.1. 2sc3417 3da3417.pdf Size:261K _update
2SC3417(3DA3417) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:高清晰度显像管视频输出,彩电色度输出和高击穿电压驱动。/Purpose: High-definition CRT display, color TV chroma output and high breakdown voltage driver. 特点:耐压高,高频特性好。/Features: High breakdown voltage, excellent high frequency Characteristic. 极限参数/Absolute maxi
4.2. 2sc3415s.pdf Size:68K _update
2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter (2) Base (3) Collector 0.3Min. Absolute maximum ratings (Ta=25°
4.3. 2sc3419.pdf Size:176K _toshiba
4.4. 2sc3417.pdf Size:150K _sanyo
Ordering number:EN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Color TV chroma output, high-voltage driver appli- 2009B cations. [2SA1353/2SC3417] Features High breakdown voltage : VCEO? 300V. Excellent high frequency c
4.5. 2sc3416.pdf Size:149K _sanyo
Ordering number:EN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Color TV chroma output, high-voltage driver unit:mm applicatons. 2009B [2SA1352/2SC3416] Features High breakdown voltage : VCEO? 200V. Small reverse transfer capacitance and excellent high frequency ch
4.6. 2sc4061k 2sc3415s 2sc4015.pdf Size:163K _rohm
Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter ?Absolute maximum ratings (Ta=25?C) (2) Base (3) Collector Parameter Symbol Limits Unit 0.3Min. ROHM : SMT3 Eac
4.7. 2sc3413.pdf Size:24K _hitachi
2SC3413 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC
4.8. 2sc3415.pdf Size:78K _secos
2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? High Breakdown Voltage G H ? Low Collector Output Capacitance ? Ideal for Chroma Circuit ?Emitter ?Collector J ?Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC3415-M 2SC3415-
4.9. 2sc3419.pdf Size:200K _inchange_semiconductor
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3419 DESCRIPTION ·Low Collector Saturation Voltage ·High power dissipation ·Complementary to 2SA1356 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U
4.10. 2sc3416.pdf Size:198K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO ·Complement to Type 2SA1352 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V
Otros transistores... 2SC3405 , 2SC3406 , 2SC3407 , 2SC3408 , 2SC3409 , 2SC341 , 2SC3410 , 2SC3411 , S8550 , 2SC3413 , 2SC3414 , 2SC3415 , 2SC3416 , 2SC3416C , 2SC3416D , 2SC3416E , 2SC3416F .
