isc Silicon NPN Power Transistor 2SC3412DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vol

Ordering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Color TV chroma output, high-voltage driver appli-2009Bcations.[2SA1353/2SC3417]Features High breakdown voltage : VCEO 300V. Excellent high fr

Ordering number:EN1411CPNP/NPN Epitaxial Planar Silicon Transistors2SA1352/2SC3416Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Color TV chroma output, high-voltage driverunit:mmapplicatons.2009B[2SA1352/2SC3416]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfreq

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.62.8(1) EmitterAbsolute maximum ratings (Ta=25C) (2) Base(3) CollectorParameter Symbol Limits Unit0.3Min.ROHM

2SC4061K / 2SC3415S / 2SC4015TransistorsChroma amplifier transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(2) Base(3) Collector0.3Min. Absolute maximum ratings (Ta=25

2SC3413Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3413Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip

2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage G H Low Collector Output Capacitance Ideal for Chroma Circuit EmitterCollectorJBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC

2SC3417(3DA3417) NPN /SILICON NPN TRANSISTOR :,/Purpose: High-definition CRT display, color TV chroma output and high breakdown voltage driver. :,/Features: High breakdown voltage, excellent high frequency Characteristic. /Absolute maxi

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3419DESCRIPTIONLow Collector Saturation VoltageHigh power dissipationComplementary to 2SA1356100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3416DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 200V (Min)(BR)CEOComplement to Type 2SA1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV